Gallium Nitride Semiconductor Device Market

Gallium Nitride Semiconductor Device Market Outlook (2024 to 2034)

The global gallium nitride semiconductor device market is estimated at a size of US$ 1.87 billion in 2024. Demand for GaN semiconductor devices is projected to increase at a noteworthy CAGR of 23.1% to touch a market valuation of US$ 14.95 billion by the end of 2034.

Gallium nitride (GaN) semiconductor devices are leading the way in technological innovation and are transforming several sectors with their exceptional dependability, performance, and efficiency. GaN semiconductor devices are changing the way that electronic systems are designed, from power electronics and wireless communication to applications in the automotive and aerospace industries.

Advantages of GaN over silicon devices such as higher energy efficiency, lower costs, and faster device speed, and others are driving their extensive use, thus contributing to the gallium nitride semiconductor device market size. Silicon materials have been used for manufacturing electronic devices such as smartphones, computers, cameras, and televisions.

Gallium nitride semiconductor devices are being incorporated into electronic systems more often by the aerospace and automotive sectors to improve performance and reliability. With GaN-based power devices, higher driving ranges and quicker charging times are made possible in electric vehicles (EVs) drivetrains, onboard chargers, and power management systems. GaN devices are utilized in satellite communication, avionics, and radar systems in the aerospace industry to increase performance and reduce weight.

GaN semiconductor devices are becoming more popular due to the trend toward electronic component integration and downsizing. GaN technology makes it possible to create highly integrated, lightweight, and small systems with increased efficiency and performance.

Key Market Growth Drivers

• Growing production of robots worldwide is also contributing to market growth. GaN is used for servo drives for motion control and robotics.
• Use of GaN in 5G multi-chip modules is rising to develop energy-efficient mobile networks. Therefore, various semiconductor companies are making efforts to integrate GaN in 5G multi-chip modules.
• Increasing need for automation in the manufacturing process is one of the key gallium nitride semiconductor device market trends.
• Rising demand for GaN semiconductor devices is being driven by the need for high-efficiency power electronic solutions.
• Adoption of gallium nitride (GaN)-based semiconductor power devices is increasing over silicon-based devices due to their reduced switching losses, higher operating frequencies, and improved thermal performance.
• GaN power devices are being increasingly used in applications such as power supplies, inverters, and electric vehicles as businesses seek ways to maximize energy efficiency and reduce their carbon footprint.
• Growing demand for high-frequency RF GaN semiconductor devices is being driven by the increasing implementation of IoT, 5G networks, radar systems, and other wireless communication technologies.
• GaN devices are ideal for next-generation wireless communication systems because they offer higher power density, broader bandwidth, and lower noise figures.
• Increasing need for higher data rates and broader network coverage is also driving gallium nitride semiconductor device market growth.

Report Attribute	Detail
Gallium Nitride Semiconductor Device Market Size (2024E)	US$ 1.87 Billion
Forecasted Market Value (2034F)	US$ 14.95 Billion
Global Market Growth Rate (2024 to 2034)	23.1% CAGR
North America Market Share (2024E)	32.9%
East Asia Market Value (2024E)	US$ 351.7 Million
GaN Radio Frequency Devices Segment Value (2034F)	US$ 6.94 Billion
Automotive Segment Value (2034F)	US$ 4.66 Billion
Key Companies Profiled	Cree Inc.; Efficient Power Conversion Corporation; FUJITSU; GaN Systems; NexgenPowerSystems; NXP Semiconductor; Qorvo Inc.; Texas Instruments Incorporated; Toshiba Corporation; Wolfspeed, Inc.; Infineon Technologies AG.

Which Advantages Do GaN Semiconductor Devices Offer Electric Vehicle Manufacturers?

“GaN Devices Enabling Faster Charging of Electric Vehicles”

Growing number of electric vehicles worldwide is driving demand for gallium nitride semiconductor devices. This is because GaN enables automakers to reduce vehicle charging time, improve cost efficiency, increase power density, and enhance driving range. Various companies are thereby making efforts to provide GaN systems for electric vehicles (EVs).

• For instance, in November 2021, GaN Systems, a GaN power semiconductors provider, announced its partnership with Universal Scientific Industrial Co., Ltd. (USI), a subsidiary of ASE Technologies. The partnership was aimed at developing GaN power modules for the EV market.

Various GaN semiconductor device manufacturers receive funding from venture capital companies, which helps them enhance their offerings and market position. Companies are using funding to accelerate the adoption and innovation of GaN technology across its consumer, automotive, industrial, and enterprise markets.

• In November 2021, GaN Systems, a power chip maker, announced that it raised US$ 150 million in a funding round.
• In February 2021, Cambridge GaN Devices, a fabless semiconductor company, raised US$ 9.5 million in a Series A round. The company used the funding to expand its GaN product portfolio.

What’s Negatively Impacting Sales Growth of GaN Semiconductor Devices?

“High Cost Associated with Switching to GaN Technology”

Deployment of GaN technology is facing challenges from existing silicon-based semiconductor devices. Silicon-based devices are widely used in various applications and the current infrastructure as they have long been the industry standard. Making the switch to GaN technology needs large expenditures in R&D, production, and even modifications to current systems and procedures. It is difficult to persuade customers and companies to move from well-known silicon-based solutions to GaN-based substitutes because of things such as perceived dangers, compatibility issues, and the requirement for retraining.

Increasing need for sophisticated electronic systems and the better performance and efficiency that GaN devices provide are fueling attempts to get beyond these challenges and hasten the adoption of GaN technology across various sectors such as automotive, aerospace, consumer electronics, defense & aerospace, etc.

Country-wise Insights

North America is estimated to hold 32.9% of the worldwide gallium nitride semiconductor device market share in 2024 and by 2034, it is forecasted to account for 33.1%. East Asia is expected to account for a significant market share throughout the projection period due to the increasing application of GaN semiconductor devices in the automotive and consumer electronic sectors.

Why is Demand for Gallium Nitride Semiconductor Devices High in the United States?

“Growing Production of Electric Vehicles and Funding from Aerospace Sector”

Attribute	United States
Market Value (2024E)	US$ 523.8 Million
Growth Rate (2024 to 2034)	23.2% CAGR
Projected Value (2034F)	US$ 4.22 Billion

Growing popularity of electric vehicles (EVs) and renewable energy sources in the United States is driving up demand for gallium nitride (GaN) semiconductor devices. GaN devices have several attractive features over their silicon-based equivalents, such as lower power losses, higher operating frequencies, and smaller form factors. These beneficial factors are making GaN semiconductor devices suitable for vital parts in grid-tied power converters, solar inverters, and EV drivetrains, satisfying the changing demands of the transportation and green energy industries in the country.

Other than these reasons, increasing investments from the defense & aerospace industry in research & development are fueling the market growth in the United States. Also, funding provided by government bodies to semiconductor companies is contributing to increasing demand.

What is Boosting Application of GaN Nitride Semiconductor Devices in South Korea?

“Huge Investments in Wireless-Communication Technologies”

Attribute	South Korea
Market Value (2024E)	US$ 174 Million
Growth Rate (2024 to 2034)	23% CAGR
Projected Value (2034F)	US$ 1.38 Billion

Growing need for gallium nitride semiconductor devices in South Korea is being driven by the country's major investments in next-generation wireless communication technologies, such as 5G networks and Internet of Things (IoT) devices. Due to its exceptional properties, GaN is perfect for high-frequency radio frequency applications, which are crucial for the creation of 5G base stations, Internet of Things (IoT) devices, and other wireless communication systems. These devices are essential in fulfilling the increasing needs of expanding network coverage, more connections, and quicker data rates.

Category-wise Insights

Based on wafer size, the market is segmented into 2-inch, 4-inch, 6-inch, and 8-inch. The 4-inch segment accounts for a significant share of the global revenue. This is because 4-inch wafers facilitate the large-scale production of semiconductor devices. The implementation of 4-inch wafers is increasing at a significant pace as these wafers help overcome the limitations of 2-inch wafers and are widely used in semiconductor product-based industries.

Which Advantages Do GaN Radio Frequency Devices Offer Over Conventional Devices?

“Higher Power Density and Increased Efficiency of GaN Radio Frequency Devices”

Attribute	GaN Radio Frequency Devices
Segment Value (2024E)	US$ 864.3 Million
Growth Rate (2024 to 2034)	23.2% CAGR
Projected Value (2034F)	US$ 6.94 Billion

Due to its improved performance over conventional silicon-based devices, gallium nitride (GaN) frequency devices are in increased demand worldwide. Higher power density, increased efficiency, and better high-frequency functioning are all provided by GaN devices. These advantages make them a perfect fit for various uses, including but not limited to 5G infrastructure, automotive, aerospace and defense, and renewable energy systems. The continuous development of GaN technology and production techniques is also boosting its application in various sectors.

Which End User is Generating Substantial Revenue Streams for Companies?

“Reduced Energy Loss Offered by GaN Devices Boosting Use in Automotive Sector”

Attribute	Automotive
Segment Value (2024E)	US$ 540.7 Million
Growth Rate (2024 to 2034)	24% CAGR
Projected Value (2034F)	US$ 4.66 Billion

Due to gallium nitride semiconductor devices' superior energy loss, compact size, and high efficiency over conventional silicon-based semiconductors, they are seeing increased use in the automotive sector. The creation of more energy-efficient and compact electric and hybrid automobiles is made possible by this. Higher frequencies of operation for gallium nitride semiconductors also allow for better control over electric motors, which enhances the performance and range of electric cars.

Competitive Landscape

Key players in the gallium nitride semiconductor device market are focusing on product innovation and strategic mergers and acquisitions. Frontrunners are emphasizing capacity enhancements and global footprint expansion to leverage lucrative prospects in developing economies.

• In March 2024, the completion of Infineon Technologies AG's acquisition of GaN Systems Inc. was announced. The Ottawa-based business offers a wide range of power conversion solutions based on gallium nitride (GaN) as well as cutting-edge application expertise. After obtaining all necessary regulatory permissions, GaN Systems joined Infineon on the closing date.
• In March 2024, the Korean arm of an American chip company, Texas Instruments (TI) launched new gallium nitride-based (GaN) power semiconductor products with better power-converter efficiency and higher power density than silicon-based products, to lead the automotive and industrial power management semiconductor market.
• In November 2023, to provide advanced, high power-density adapters and data center power solutions employing GaN, Cambridge GaN Devices (CGD) has partnered with Cambridge University Technical Services (CUTS), UK, and Chicony Power Technology, Taiwan.
• In August 2023, the BM3G0xxMUV-LB series of EcoGaN power-stage integrated circuits (ICs) was developed by ROHM Co Ltd, a power semiconductor manufacturer based in Japan. It features a gate driver and built-in 650V GaN high-electron-mobility transistors (HEMTs) and is optimized for primary power supplies (AC-DC, PFC circuits) inside industrial applications (like data servers and office automation devices) and consumer applications (like home appliances, AC adapters, PCs, TVs, refrigerators, and air conditioners).
• In February 2021, Efficient Power Conversion Corporation launched EPC9157, which integrated Renesas ISL 81806 with EPC2218 eGAN to achieve more than 90% efficiency. Renesas ISL 81806 used the high performance of GaN to enable high-power solutions and reduce BOM cost, additionally making the design simple and similar to using silicon-built FETs.

Fact.MR provides detailed information about the price points of key manufacturers of gallium nitride semiconductor devices positioned across the world, sales growth, production capacity, and speculative technological expansion, in this updated market report.

Segmentation of Gallium Nitride Semiconductor Device Market Research

• By Product :

  • GaN Radio Frequency Devices
  • GaN Opto-semiconductor Devices
  • GaN Power Semiconductor Devices

• By Component :

  • Transistors
  • Diodes
  • Rectifiers
  • Power ICs

• By Wafer Size :

  • 2-inch
  • 4-inch
  • 6-inch
  • 8-inch

• By End Use :

  • Automotive
  • Consumer Electronics
  • Defense & Aerospace
  • Healthcare
  • Industrial & Power
  • Information & Communication Technology

• By Region :

  • North America
  • Western Europe
  • Eastern Europe
  • Latin America
  • East Asia
  • South Asia & Pacific
  • Middle East & Africa