GaN RF Device Market
GaN RF Device Market Study by Wireless Infrastructure, Radars, Power Storage, PV Inverters, Satellite Communication, EV Components, HEV Charging, and Traction Motor Components from 2024 to 2034
Analysis of GaN RF Device Market Covering 30+ Countries Including Analysis of US, Canada, UK, Germany, France, Nordics, GCC countries, Japan, Korea and many more
GaN RF Device Market Outlook (2024 to 2034)
According to this detailed Fact.MR industry analysis, the global GaN RF device market is anticipated to reach a valuation of US$ 1.43 billion in 2024. Revenue from worldwide sales of GaN RF devices is projected to increase at a CAGR of 21.3% and reach US$ 9.88 billion by 2034.
GaN (Gallium Nitride) exists as mainstream RF technology with significant applications in high-power radio frequency amplifiers, thermal management devices, and 4G and 5G operating devices. Ongoing research on the development of 6G networks is set to uplift the sales of GaN RF power devices over the coming years.
GaN RF devices comprise crucial applications in remote controls, mobile and computer network access control, and television broadcasting devices. In addition, Wi-Fi, Bluetooth, and other wireless communication equipment are manufactured using GaN semiconductors. The pricing scenario of GaN RF devices completely depends on the production of gallium nitride across the globe.
Gallium nitride (GaN)-based radio frequency (RF) technology is more effective compared to conventional silicon-based RF devices. GaN technology offers wider bandwidths, improved thermal properties, and energy efficiency. Rising demand for high connectivity speed and bandwidth is driving the use of GaN RF devices in the telecommunications sector. A key GaN RF device market trend is ongoing investments in R&D to enhance the performance and reliability of GaN RF technologies.
- The North American GaN RF device market is estimated at US$ 342.7 million in 2024.
- East Asia is projected to hold 23.1% of the global GaN RF device market share by 2034.
| Report Attribute | Detail |
|---|---|
| GaN RF Device Market Size (2024E) | US$ 1.43 Billion |
| Forecasted Market Value (2034F) | US$ 9.88 Billion |
| Global Market Growth Rate (2024 to 2034) | 21.3% CAGR |
| South Korea Market Value (2034F) | US$ 527.6 Million |
| GaN RF Module Demand Growth (2024 to 2034) | 21.1% CAGR |
| Key Companies Profiled | Raytheon; Sumitomo Electric; Cree Inc.; Maxlinear; Bosch; STMicroelectronics; Aethercomm Inc.; ROHM Semiconductors; Hitachi; Mitsubishi Electric; Panasonic; Renesas; NXP Semiconductors NV; Toshiba Corporation; Infineon. |
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What is the Path Ahead for GaN RF Device Manufacturers?
“Extensive Use of GaN RF Technology in Wireless Communication Systems”
Rapid spread of 5G networks across the world and ongoing R&D on 6G networks will offer lucrative opportunities for GaN RF device manufacturers. GaN RF devices are effective in handling high power levels and are capable of operating at increased frequencies.
GaN RF devices are also widely used in the defense and aerospace sectors. These devices are exhibiting extensive application in electronic warfare (EW) equipment, communication systems, and advanced radar systems. High power density and energy efficiency are driving their application in defense and aerospace devices.
“Rising Demand for GaN RF-based Radar Systems in Automobiles”
GaN RF technology is used for the production of radar systems. GaN RF devices offer high energy efficiency and power, which is essential for the effective performance of radar systems. The automotive sector makes high use of radar systems in autonomous vehicles and advanced driver assistance system (ADAS) manufacturing. This directly explains why the demand for GaN RF devices is high in the automotive industry.
What is Increasing the Costs of Raw Materials?
“Geopolitical Tensions Affecting Supply Chain of Gallium Nitride”
Raw material costs and supply chain constraints are majorly hampering overall GaN RF device market growth. The price of gallium nitride (GaN), a vital material for RF device production, is high compared to silicon. Limited availability of gallium nitride is hindering their production. Ongoing conflicts between countries such as Russia & Ukraine and Israel & Palestine are also affecting the supply chain of gallium nitride to some extent. These geopolitical tensions are introducing challenges to the supply chain and ultimately pushing up the cost of end products.
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Start-up Ecosystem
- Porotech is a British start-up that offers microLED displays using gallium nitride (GaN) technology. The company’s microLED display uses indium gallium nitride (InGaN) epitaxial wafers to improve the viewing experience in mixed reality (MR) and augmented reality (AR) glasses.
- United States-based start-up Mivium offers advanced gallium nitride (GaN) particle reactors. The product is built for precision and scalability. Several consumer electronic product manufacturers make wide use of Mivium’s gallium nitride (GaN) particle.
Country-wise Analysis
What’s Driving GaN RF System Sales in the United States?
“GaN RF Technology Used to Enhance Performance of Aerospace and Defense Products”
| Attribute | United States |
|---|---|
| Market Value (2024E) | US$ 152.5 Million |
| Growth Rate (2024 to 2034) | 21.8% CAGR |
| Projected Value (2034F) | US$ 1.09 Billion |
The aerospace and defense sector is the prime user of GaN RF technology in the United States. The energy efficiency characteristic of GaN RF technology is driving its widespread use in airborne radar systems. The United States also enjoys the strong presence of other end-use industries such as telecommunications, consumer electronics, and medical device manufacturing. GaN RF devices are also used in these industries to increase the speed and battery life of products.
Why is China a Profit Pool for GaN RF Devices Manufacturers?
“2025 Plan to Expand 5G Networks across the Country”
| Attribute | China |
|---|---|
| Market Value (2024E) | US$ 157 Million |
| Growth Rate (2024 to 2034) | 21.3% CAGR |
| Projected Value (2034F) | US$ 1.08 Billion |
China holds huge opportunities for GaN RF device manufacturers to multiply their present business framework. China’s 2025 plan initiated through the ‘Made in China’ strategy, is set to implement a commercial 5G network throughout its country. The aforementioned industry is a hot topic of present technical research.
Wearable connecting devices, wireless equipment, high-performance gaming phones, and other RF-operated devices are estimated to exhibit high demand throughout the forecast period. Direct application of GaN RF components in these electronic items is expected to provide sky-scraping revenue-generating opportunities for market players. An increase in the production of power storage devices, PV inverters, and wireless infrastructure is also set to drive the demand growth for GaN RF devices over next 10 years.
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Category-wise Analysis
What Makes the Telecommunication Industry a Leading User of GaN RF Devices?
“High Electron Mobility and High Current Density Increasing Telecommunication Application of GaN RF Devices”
| Attribute | Telecommunication |
|---|---|
| Segment Value (2024E) | US$ 312.6 Million |
| Growth Rate (2024 to 2034) | 21.4% CAGR |
| Projected Value (2034F) | US$ 2.16 Billion |
Out of the key revenue-generating end-use industries for GaN RF devices, significant demand is expected to come from the telecommunication industry. From portable electronic devices to global wireless infrastructure, both are comprised of GaN RF technology. Therefore, the high use of GaN RF devices within the telecommunication industry is estimated to account for a 21.9% share by 2034.
In addition, demand for next-generation LTE networks with high bandwidth is becoming a headline. This is increasing the number of network service providers in the market. Hence, the demand for high-frequency data bandwidth provided by GaN RF devices is set to rise due to newly added servers and clouds in the telecommunication sector.
Why is Demand for GaN RF Discrete Devices So High?
“Versatile Characteristics of Gallium Nitride (GaN) Discrete Devices Increasing their Application Areas”
| Attribute | GaN RF Discrete Devices |
|---|---|
| Segment Value (2024E) | US$ 782.8 Million |
| Growth Rate (2024 to 2034) | 21.4% CAGR |
| Projected Value (2034F) | US$ 5.45 Billion |
Gallium nitride (GaN) discrete devices are electronic components made from the semiconductor material GaN. These discrete devices are used for high-frequency and power applications. Compared to silicon counterparts, gallium nitride (GaN) discrete devices are highly effective. They are finding applications in wireless Bluetooth systems, intrusion detectors, GPS trackers, remote monitoring systems, sensors, and other IoT components. GaN discrete devices' ability to operate at high temperatures is further driving their demand growth.
Competitive Landscape
Key players in the GaN RF device industry are mainly employing growth-oriented strategies such as the establishment of GaN RF device value chains. Furthermore, high focus on branding and continuous technical advancements in their manufacturing technology rank at the top of their priority list. These strategies are helping the industry giants to expand their regional footprint and garner high market share, thus providing a competitive advantage.
- In April 2024, Guerrilla RF, Inc. announced the acquisition of Gallium Semiconductor's entire portfolio of gallium nitride (GaN) power amplifiers and front-end modules.
- In September 2023, Aixtron SE, a deposition equipment specialist, declared the launch of a compact cluster solution for GaN-based power and RF devices.
Fact.MR provides detailed information about the price points of key manufacturers of GaN RF devices across the world, sales growth, production capacity, and speculative technological expansion, in the recently updated market report.
Key Segments of GaN RF Device Market Research
-
By Product Type :
- Module
- Discrete
-
By Application :
- Wireless Infrastructure
- Radars & Avionics
- Power Storage
- PV Inverters
- CATV
- Satellite Communication
- Hybrid & EV Components
- HEV Charging Equipment
- Traction Motor Components
- Others
-
By End Use :
- Telecommunications
- Automotive
- Aerospace & Defense
- Medical Devices
- Industrial
-
By Region :
- North America
- Latin America
- Western Europe
- Eastern Europe
- East Asia
- South Asia & Pacific
- Middle East & Africa
- FAQs -
How big is the GaN RF device market in 2024?
The global GaN RF device market is evaluated at US$ 1.43 billion in 2024.
What is the projected market size for GaN RF devices for 2034?
Worldwide sales of GaN RF devices are forecasted to reach US$ 9.88 billion by 2034.
What are the future projections for GaN RF devices?
Demand for GaN RF devices is foreseen to rise at a CAGR of 21.3% through 2034.
Which GaN RF device type is most famous?
GaN RF discrete device sales are projected to reach US$ 5.45 billion by 2034.
What is the North American market valued at?
The North American market is calculated to reach US$ 2.4 billion by 2034.
What are the estimated sales of GaN RF devices in South Korea?
The South Korea market is approximated at a value of US$ 71.3 million in 2024.
Who are the well-known producers of GaN RF devices?
Top companies in the market are Sumitomo Electric, Cree Inc., Maxlinear, Bosch, and STMicroelectronics.
GaN RF Device Market